NTE492
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Gate–Source Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±20V
Drain Current, I
D
Continuous (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (T
A
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. The Power Dissipation of the package may result in a lower continuous drain current.
Note 2. Pulse Width
≤
300µs, Duty Cycle
≤
2%.
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Zero–Gate–Voltage Drain Current
Drain–Source Breakdown Voltage
Gate Reverse Current
ON Characteristics
(Note 2)
Gate Threshold Voltage
Static Drain–Source ON Resist-
ance
Small–Signal Characteristics
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Forward Transconductance
C
iss
C
rss
C
oss
g
fs
V
DS
= 25V, V
GS
= 0, f = 1MHz
V
DS
= 25V, V
GS
= 0, f = 1MHz
V
DS
= 25V, V
GS
= 0, f = 1MHz
V
DS
= 25V, I
D
= 250mA
–
–
–
60
6.0
30
–
–
–
–
pF
pF
pF
mmhos
V
GS(Th)
r
DS(on)
I
D
= 1mA, V
DS
= V
GS
V
GS
= 10V, I
D
= 100mA
V
GS
= 10V, I
D
= 250mA
1.0
–
–
–
4.5
4.8
3.0
6.0
6.4
V
Ω
Ω
I
DSS
I
GSS
V
DS
= 130V, V
GS
= 0
V
GS
= 15V, V
DS
= 0
–
200
–
–
–
30
–
nA
V
nA
V
(BR)DSX
V
GS
= 0, I
D
= 100µA
Symbol
Test Conditions
Min Typ Max
Unit
0.01 10.0
200 400
Note 2. Pulse Width
≤
300µs, Duty Cycle
≤
2%.
NTE [ NTE ELECTRONICS ]
