Electrical Characteristics:
(T
C
= +25°C unless otherwise specified)
Parameter
Peak Forward or Reverse Blocking
Current
Instantaneous On–State Voltage
Gate Trigger Current (Continuous DC)
Gate Trigger Voltage (Continuous DC)
Holding Current
Gate Controlled Turn–On Time
Circuit Commutated Turn–Off Time
Symbol
I
DRM
,
I
RRM
V
T
I
GT
V
GT
I
H
t
gt
t
q
Test Conditions
Rated V
DRM
or V
RRM
T
C
= +25°C
T
C
= +100°C
I
TM
= 30A
(Peak)
, Pulse Width
≤
1ms,
Duty Cycle
≤
2%
V
D
= 12V, R
L
= 30Ω
V
D
= 12V, R
L
= 30Ω
Gate Open, V
D
= 12V, I
T
= 150mA
V
D
= Rated V
DRM
, I
TM
= 2A, I
GR
= 80mA
V
D
= V
DRM
, I
TM
= 2A, Pulse Width = 50µs,
dv/dt = 200V/µs, di/dt = 10A/µs,
T
C
= +75°C
V
D
= Rated V
DRM
, Exponential Rise,
T
C
= +100°C
Min
–
–
–
–
–
–
–
–
Typ
–
–
1.7
8
0.9
10
1.6
25
Max Unit
10
2
2.0
15
1.5
20
–
–
µA
mA
V
mA
V
mA
µs
µs
Critical Rate–of–Rise of Off–State
Voltage
dv/dt
–
100
–
V/µs
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
Anode
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Cathode
.100 (2.54)
Gate
Anode
NTE [ NTE ELECTRONICS ]
