NTE5426
Silicon Controlled Rectifier (SCR)
Sensitive Gate
Description:
The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device
may be switched from off–state to conduction by a current pulse applied to the gate terminal and is
designed for control applications in lighting, heating, cooling, and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (Gate Open, T
C
= +110°C), V
DRM
. . . . . . . . . . . . . . . . . . . . . 400V
Repetitive Peak Reverse Voltage (Gate Open, T
C
= +110°C), V
RRM
. . . . . . . . . . . . . . . . . . . . . . 400V
RMS On–State Current (T
C
= +80°C, 180° Conduction Angle), I
T(RMS)
. . . . . . . . . . . . . . . . . . . . 10A
Peak Surge (Non–Repetitive) On–State Current (One Cycle, 50 or 60Hz), I
TSM
. . . . . . . . . . . . 80A
Peak Gate–Trigger Current (3µs max), I
GTM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak Gate–Power Dissipation (I
GT
= I
GTM
), P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W
Average Gate Power Dissipation, P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Typical Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0°C/W
Electrical Characteristics:
(T
C
= +25°C and “Maximum Ratings” unless otherwise specified)
Parameter
Peak Off–State Current
Maximum On–State Voltage
Gate Trigger Current, Continuous DC
Gate Trigger Voltage, Continuous DC
DC Holding Current
Turn–On Time
Critical Rate of Rise of Off–State
Voltage
Symbol
I
DRM
,
I
RRM
V
TM
I
GT
V
GT
I
H
t
gt
critical
dv/dt
Test Conditions
Rated V
DRM
or V
RRM
, T
C
= +110°C,
RG – K = 1kΩ
I
T
= Rated Amps
Anode Voltage = 12V, R
L
= 60Ω
Anode Voltage = 12V, R
L
= 60Ω
Gate Open, RG – K = 1kΩ
(t
d
+ t
r
) I
GT
= 150mA
Gate Open, T
C
= +110°C,
RG – K = 1kΩ
Min
–
–
–
–
–
–
–
Typ
–
–
–
–
–
–
8
Max
0.1
2.0
200
0.8
3.0
2.5
–
Unit
mA
V
µA
V
mA
µs
V/µs
NTE [ NTE ELECTRONICS ]
