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NTE5558 参数 Datasheet PDF下载

NTE5558图片预览
型号: NTE5558
PDF下载: 下载PDF文件 查看货源
内容描述: 可控硅整流器器 [Silicon Controlled Rectifiers]
分类和应用: 可控硅整流器
文件页数/大小: 2 页 / 23 K
品牌: NTE [ NTE ELECTRONICS ]
 浏览型号NTE5558的Datasheet PDF文件第2页  
NTE5550 thru NTE5558
Silicon Controlled Rectifiers
Description:
The NTE5550 thru NTE5558 SCR’s are designed primarily for half–wave AC control applications,
such as motor controls, heating controls and power supply crowbar circuits.
Features:
D
Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability.
D
Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation
and Durability.
D
Blocking Voltage to 800 Volts
D
300A Surge Current Capability
Absolute Maximum Ratings:
Peak Reverse Blocking Voltage (Note 1), V
RRM
NTE5550 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
NTE5552 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5554 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5556 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5558 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Forward Current (T
C
= +85°C), I
T(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
(All Conduction Angles), I
T(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Peak Non–Repetitive Surge Current (8.3ms), I
TSM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A
(1/2 Cycle, Sine Wave, 1.5ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350A
Forward Peak Gate Power, P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Forward Average Gate Power, P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Forward Peak Gate Current, I
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5°C/W
Note 1. V
RRM
for all types can be applied on a continuous dc basis without incurring damage.
Ratings apply for zero or negative gate voltage. Devices should not be tested for block-
ing capability in a manner such that the voltage supplied exceeds the rated blocking
voltage.