NTE555
Silicon Pin Diode
UHF/VHF Detector
Description:
The NTE555 is designed primarily for high–efficiency UHF and VHF detector applications. It is readily
adaptable to may other fast switching RF and digital applications.
Features:
D
Schottky Barrier Construction Provides Stable Characteristics by Eliminating
the “Cat–Whisker” or “S–Bend” Contact
D
Very Low Capacitance: 1.0pF
D
Extremely Low Minority Carrier Lifetime: 100ps (Max)
D
High Reverse Voltage: V
R
= 50V
D
Low Reverse Leakage Current: I
R
= 200nA (Max)
Absolute Maximum Ratings:
(T
J
= +125°C, unless otherwise indicated)
Reverse Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Forward Power Dissipation (T
A
= 25°C), P
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4mW/°C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Electrical Characteristics:
(T
A
= +25°C, unless otherwise indicated)
Parameter
Reverse Breakdown Voltage
Diode Capacitance
Minority Carrier Lifetime
Reverse Leakage Current
Forward Voltage
Case Capactiance
Symbol
V
(BR)R
C
T
r
I
R
V
F
C
C
Test Conditions
I
R
= 10µA
V
R
= 20V, f = 1MHz
I
F
= 5mA, Krakauer Method
V
R
= 25V
I
F
= 10mA
f = 1MHz
Min
50
–
–
–
–
–
Typ
–
0.48
15
7
1.0
0.1
Max
–
1.0
100
200
1.2
–
Unit
V
pF
ps
nA
V
pF
NTE [ NTE ELECTRONICS ]
