NTE5564 参数 Datasheet PDF下载

NTE5562, NTE5564, NTE5566

Silicon Controlled Rectifiers (SCR’s)

Description:

The NTE5562, NTE5564 and NTE5566 are silicon controlled rectifiers in a TO–48 isolated stud

TO–48 type package designed for industrial and consumer applications such as power supplies, bat-

tery chargers, temperature, motor, light and welder controls.

Absolute Maximum Ratings:

Repetitive Peak Off–State Voltage & Reverse Voltage (T

J

= +100°C), V

DRM

, V

RRM

NTE5562 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200

NTE5564 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V

NTE5566 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

RMS On–State Current (T

C

= +75°C), I

T(RMS)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A

Peak Surge (Non–Repetitive) On–State Current, I

TSM

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A

Peak Gate–Trigger Current (3µs Max), I

GTM

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Peak Gate–Power Dissipation (I

GT

≤

for 3µs Max), P

GM

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W

Average Gate Power Dissipation, P

G(AV)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W

Operating Temperature Range, T

oper

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C

Typical Thermal Resistance, Junction–to–Case, R

thJC

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6/W

Electrical Characteristics:

(At Maximum Ratings and Specified Case Temperatures)

Parameter

Peak Off–State Current

Maximum On–State Voltage (Peak)

DC Holding Current

DC Gate Trigger Current

DC Gate Controlled Turn–On Time

Critical Rate of Rise of Off–State Voltage

Symbol

I

DRM

,

I

RRM

V

TM

I

HO

I

GT

T

GT

Critical

dv/dt

Test Conditions

T

J

= +100°C, Gate Open, V

DRM

&V

RRM

T

C

= +25°C

T

C

= +25°C, Gate Open

Anode Voltage = 12Vdc, R

L

= 30Ω,

T

C

=+ 25°C

I

GT

= 150mA , t

D

+t

R

T

C

= +100°C, Gate Open

Min

–

–

–

–

–

–

Typ

–

–

–

–

2.5

100

Max Unit

2.0

1.6

50

30

–

–

mA

V

mA

mA

µs

V/µs