NTE56004 thru NTE56010
TRIAC, 15 Amp
The NTE56004 thru NTE56010 series of TRIACs are designed primarily for full–wave AC control ap-
plications, such as solid–state relays, motor controls, heating controls and power supplies; or wherev-
er full–wave silicon gate controlled solid–state devices are needed. TRIAC type thyristors switch from
a blocking to a conducting state for either polarity of applied anode voltage with positive or negative
gate triggering.
Features:
D
Blocking Voltage from 200 to 800 Volts
D
All Diffused and Glass Passivated Junctions
D
Small, Rugged, TO220 package for Low Thermal Resistance, High Heat Dissipation and Durability
D
Gate Triggering specified in Four Quadrants
Absolute Maximum Ratings:
Peak Repetitive Off–State Voltage, (T
J
= –40° to 125°C), V
DRM
NTE56004 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE56006 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE56008 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE56010 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Peak Gate Voltage, V
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
On–State Current RMS (Full Cycle Sine Wave 50 to 60Hz,T
C
= +90°C), I
T(RMS)
. . . . . . . . . . . 15A
Circuit Fusing (t = 8.3ms) I
2
t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93A
2
s
Peak Surge Current (One Full Cycle, 60Hz, T
C
= +80°C), I
TSM
Preceded and followed by rated current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150A
Peak Gate Power (T
C
= +80°C, Pulse Width = 2µs), P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate Power (T
C
= +80°C, t = 8.3ms), P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Peak Gate Current, I
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2°C/W
NTE [ NTE ELECTRONICS ]
