NTE5645
TRIAC – 10A
Isolated Tab
Description:
The NTE5645 is an 10 Amp TRIAC in a TO220 type package designed to be driven directly with IC
and MOS devices and features proprietary, void–free glass passivated chips.
This device is a bi–directional triode thyristor and may be switched from off–state to conduction for
either polarity of applied voltage with positive or negative gate trigger current. The NTE5645 is de-
signed for control applications in lighting, heating, cooling and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (Gate Open, T
J
= +100°C), V
DRM
. . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (T
C
= +75°C, Conduction Angle of 180°C), I
T(RMS)
. . . . . . . . . . . . . . . . . 10A
Peak Surge (Non–Repetitive) On–State Current (One Cycle, 50Hz or 60Hz), I
TSM
. . . . . . . . . 100A
Peak Gate–Trigger Current (3µs Max), I
GTM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak Gate–Power Dissipation (I
GT
≤
I
GTM
for 3µs Max), P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Average Gate–Power Dissipation, P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Typical Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W
Electrical Characteristics:
(T
C
= +25°C, Maximum Ratings unless otherwise specified)
Parameter
Peak Off–State Current
Max. On–State Voltage
DC Holding Current
Critical Rate–of–Rise of Off–State
Voltage
DC Gate Trigger Current
T
2
(+) Gate (+), T
2
(–) Gate (–)
T
2
(+) Gate (–), T
2
(–) Gate (+)
Symbol
I
DRM
V
TM
I
H
Critical
dv/dt
I
GT
Test Conditions
V
DRM
= 600V, Gate Open, T
J
= +100°C
I
T
= 14A
Gate Open
V
D
= 600V, Gate Open, T
C
= +100°C
V
D
= 12V, R
L
= 30Ω
Min Typ Max Unit
–
–
–
–
–
–
–
5
2
2.2
50
–
mA
V
mA
V/µs
–
–
–
–
50
80
mA
mA
NTE [ NTE ELECTRONICS ]
