NTE583 参数 Datasheet PDF下载

NTE583

Silicon Rectifier Diode

Schottky, RF Switch

Description:

The NTE583 is a metal to silicon junction diode featuring high breakdown, low turn–on voltage and

ultrafast switching. This device is primarly intented for high level UHF/VHF detection and pulse appli-

cation with broad dynamic range.

Absolute Maximum Ratings:

(T

A

= +25°C, Limiting Values)

Repetitive Peak Reverse Voltage, V

RRM

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V

Forward Continuous Current (Figure 1), I

F

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA

Surge Non–Repetitive Forward Current (t

p

≤

1s, Figure 1), I

FSM

. . . . . . . . . . . . . . . . . . . . . . . . 50mA

Operating Junction Temperature Range, T

J

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Thermal Resistance, Junction–to–Ambient (Figure 1), R

thJA

. . . . . . . . . . . . . . . . . . . . . . . . 400°C/W

Figure 1

d

d

* d = 4mm

Infinite heat sinks

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