NTE58 (NPN) & NTE59 (PNP)
Silicon Complementary Transistors
High Power Audio Output
Features:
D
High Power Dissipation
D
Wide Safe Operating Area
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17A
Continuous Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Total Device Dissipation (T
FL
= +25°C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W
Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Collector–Emitter Breakdown Voltage
Maximum Collector Cutoff Current
Maximum Emitter Cutoff Current
DC Forward Current Transfer Ratio
Collector–Emitter Saturation Voltage
Second Breakdown Collector Current
Cutoff Frequency
Symbol
Test Conditions
Min
200
–
–
20
–
1
–
Typ
–
–
–
–
–
–
20
Max
–
0.1
0.1
–
2.5
–
–
V
A
MHz
Unit
V
mA
mA
V
(BR)CEO
I
C
= 50mA
I
CBO
I
EBO
h
FE
V
CE(sat)
I
S/b
f
T
V
CB
= 200V, I
E
= 0
V
EB
= 6V, I
C
= 0
V
CE
= 4V, I
C
= 8A
I
C
= 10A, I
B
= 1A
V
CE
= 100V, t = 1sec
V
CE
= 12V, I
E
= 1A
NTE [ NTE ELECTRONICS ]
