NTE594
Silicon Diode, Bandswitch
Description:
The NTE594 is a silicon band switching diode in an SOT–23 type surface mount package intended
for thick and thin–film circuits.
Absolute Maximum Ratings:
Continuous Reverse Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
DC Forward Current, I
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (T
A
≤
+25°C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Thermal Resistance, Junction–to–Ambient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W
Electrical Characteristics:
(T
J
= +25°C unless otherwise specified)
Parameter
Forward Voltage
Reverse Current
Series Resistance
Diode Capacitance
Symbol
V
F
I
R
r
D
C
d
Test Conditions
I
F
= 100mA
V
R
= 20V
V
R
= 20V, T
J
= 60°C
I
F
= 5mA
V
R
= 20V, f = 1MHz
Min
–
–
–
–
–
Typ
–
–
–
0.5
0.8
Max
1.2
100
1
0.7
1.0
Unit
V
nA
µA
Ω
pF
.016 (0.48)
K
A
N.C.
.098
(2.5)
Max
.037 (0.95)
.074 (1.9)
.118 (3.0) Max
.051
(1.3)
.043 (1.1)
.007 (0.2)