NTE596
Silicon Diode, Dual, Common Anode,
High Speed
Description:
The NTE596 consists of two silicon diodes in an SOT–23 type surface mount package. The anodes
are common and the device is intended for high–speed switching applications in thick and thin–film
circuits.
Absolute Maximum Ratings:
Continuous Reverse Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Repetitive Peak Reverse Voltage, V
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Non–Repetitive Peak Forward Current (Per device, t = 1s), I
FSM
. . . . . . . . . . . . . . . . . . . . . . . 500mA
Average Rectified Forward Current (Average over any 20ms period, Note 1), I
F(Av)
. . . . . . 250mA
DC Forward Current, I
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Repetitive Peak Forward Current, I
FRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Total Power Dissipation (T
A
≤
+25°C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Thermal Resistance, Junction–to–Tab, R
thJT
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
Thermal Resistance, Tab–to–Soldering Points, R
thTS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 x 280K/W
Thermal Resistance, Soldering Points–to–Ambient (Note 2), R
thSA
. . . . . . . . . . . . . . . . . 2 x 90K/W
Note 1. Measured under pulse conditions: t
p
≤
0.5ms, I
F(AV)
= 150mA, t
(av)
≤
1ms, for sinusoidal
operation.
Note 2. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics (Per Diode):
(T
J
= +25°C unless otherwise specified)
Parameter
Forward Voltage
Symbol
V
F
Test Conditions
I
F
= 1mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
Reverse Current
Diode Capacitance
Forward Recovery Voltage
(When switched to I
F
= 10mA)
I
R
C
d
V
fr
V
R
= 70V
V
R
= 70V, T
J
= +150°C
V
R
= 0, f = 1MHz
t
r
= 20ns
Min
–
–
–
–
–
–
–
–
Typ
–
–
–
–
–
–
–
–
Max
715
855
1000
1250
2.5
50
2
1.75
Unit
mV
mV
mV
mV
µA
µA
pF
V
NTE [ NTE ELECTRONICS ]
