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NTE6094 参数 Datasheet PDF下载

NTE6094图片预览
型号: NTE6094
PDF下载: 下载PDF文件 查看货源
内容描述: 硅整流肖特基势垒 [Silicon Rectifier Schottky Barrier]
分类和应用:
文件页数/大小: 2 页 / 23 K
品牌: NTE [ NTE ELECTRONICS ]
 浏览型号NTE6094的Datasheet PDF文件第1页  
Electrical Characteristics:
(T
C
= +25°C unless otherwise specified)
Parameter
Maximum Instantaneous Forward Voltage
Symbol
v
F
Test Conditions
i
F
= 60A, Note 1
i
F
= 60A, T
C
= +125°C, Note 1
i
F
= 120A, T
C
= +125°C, Note 1
Maximum Instantaneous Reverse Current
DC Reverse Current
Maximum Capacitance
i
R
I
R
C
t
V
R
= 45V, T
C
= +25°C, Note 1
V
R
= 45V, T
C
= +125°C, Note 1
V
R
= 45V, T
C
= +115°C
V
R
= 5V, 100kHz
f
1MHz
Min Typ Max Unit
0.70
0.60
0.84
50
200
250
4000
V
V
V
mA
mA
mA
pF
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.
.687
(17.4)
Max
.667 (16.9) Dia Max
.375 (9.55) Max
1.288
(32.71)
Max
.140 (3.65) Dia Max
.450
(11.4)
Max
.200 (5.08) Max
.453
(11.5)
Max
1/4–28 UNF–2A