NTE60 (NPN) & NTE61 (PNP)
Silicon Complementary Transistors
High Power Audio, Disk Head Positioner
for Linear Applications
Description:
The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO3 type
package designed for high power audio, disk head positioners, and other linear applications.
Features:
D
High Safe Operating Area: 250W @ 50V
D
For Low Distortion Complementary Designs
D
High DC Current Gain: h
FE
= 25 Min @ I
C
= 5A
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO(sus)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Continuous Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Continuous Emitter Current, I
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Total Power Dissipation (T
C
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/°C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.70°C/W
Lead Temperature (During Soldering, 1/16” from Case, 10sec Max), T
L
. . . . . . . . . . . . . . . . +265°C
Note 1. Matched complementary pairs are available upon request (NTE61MCP). Matched comple-
mentary pairs have their gain specification (h
FE
) matched to within 10% of each other.
Electrical Characteristics:
(T
C
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
V
CEO(sus)
I
C
= 200mA, I
B
= 0, Note 2
I
CEX
I
CEO
Emitter Cutoff Current
I
EBO
V
CE
= 140V, V
BE(off)
= 1.5V
V
CE
= 140V, V
BE(off)
= 1.5V, T
C
= +150°C
V
CE
= 140V, I
B
= 0
V
EB
= 5V, I
C
= 0
140
–
–
–
–
–
–
–
–
–
–
100
2
250
100
V
µA
mA
µA
µA
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.
NTE [ NTE ELECTRONICS ]
