NTE6409 参数 Datasheet PDF下载

NTE6409

Unijunction Transistor

Description:

The NTE6409 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger

circuits.

Features:

D

Low Peak Point Current: 2µA Max

D

Low Emitter Reverse Current: 200nA Max

D

Passivated Surface for Reliability & Uniformity

Absolute Maximum Ratings:

(T

A

= +25°C, unless otherwise specified)

Power Dissipation (Note 1), P

D

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW

RMS Emitter Current, I

E(RMS)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Peak Pulse Emitter Current (Note 2), i

E

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A

Emitter Reverse Voltage, V

B2E

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

Interbase Voltage, V

B2B1

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V

Operating Junction Temperature Range, T

J

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Note 1. Derate 3mW/°C increase in ambient temperature. The total power dissipation (available

power to Emitter and Base–Two) must be limited by the external circuitry.

Note 2. Capacitor discharge: 10µF or less, 30V or less