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NTE912 参数 Datasheet PDF下载

NTE912图片预览
型号: NTE912
PDF下载: 下载PDF文件 查看货源
内容描述: 集成电路通用晶体管阵列(三隔离晶体管和一个差动连接的晶体管对) [Integrated Circuit General Purpose Transistor Array (Three Isolated Transistors and One Differentially-Connected Transistor Pair)]
分类和应用: 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
文件页数/大小: 3 页 / 33 K
品牌: NTE [ NTE ELECTRONICS ]
 浏览型号NTE912的Datasheet PDF文件第1页浏览型号NTE912的Datasheet PDF文件第3页  
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Static Characteristics
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Collector Substrate Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cutoff Current
V
(BR)CBO
I
C
= 10µA, I
E
= 0
V
(BR)CEO
I
C
= 1mA, I
B
= 0
V
(BR)CIO
I
CBO
I
CEO
Static Forward Current Transfer Ratio
h
FE
I
C
= 10µA, I
CI
= 0
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
V
CE
= 3V
I
C
= 10mA
I
C
= 1mA
I
C
= 10µA
Input Offset Current for Matched Pair
Q
1
and Q
2
. |I
IO1
– I
IO2
|
Base Emitter Voltage
V
BE
V
CE
= 3V, I
C
= 1mA
V
CE
= 3V
I
E
= 1mA
I
E
= 10mA
Magnitude of Input Offset Voltage for
Differential Pair |V
BE1
– V
BE2
|
Magnitude of Input Offset Voltage for
Isolated Transistors
|V
BE3
– V
BE4
|
|V
BE
– V
BE
|
|V
BE
– V
BE
|
4
5
5
3
Symbol
Test Conditions
Min
Typ
Max
Unit
20
15
20
5
40
60
24
60
7
0.002
100
100
54
0.3
0.715
0.800
0.45
0.45
40
0.5
2.0
5.0
5.0
V
V
V
V
nA
µA
V
(BR)EBO
I
E
= 10µA, I
C
= 0
µA
V
V
mV
mV
V
CE
= 3V, I
C
= 1mA
V
CE
= 3V, I
C
= 1mA
Temperature Coefficient of Base Emitter
Voltage
Collector Emitter Saturation Voltage
Temperature Coefficient:
Magnitude of Input–Offset Voltage
∆V
BE
∆T
V
CES
|∆V
IO
|
∆T
V
CE
= 3V, I
C
= 1mA
I
B
= 1mA, I
C
= 10mA
V
CE
= 3V, I
C
= 1mA
–1.9
0.23
1.1
mV/°C
V
µV/°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Dynamic Characteristics
Low–Frequency Noise Figure
Low–Frequency, Small–Signal
Equivalent Circuit Characteristics:
Forward Current Transfer Ratio
Short–Circuit Input Impedance
Open–Circuit Output Impedance
Open–Circuit Reverse Voltage
Transfer Ratio
Admittance Characteristics:
Forward Transfer Admittance
Input Admittance
Output Admittance
NF
f = 1kHz, V
CE
= 3V, I
C
= 100µA,
Source Resistance = 1kΩ
3.25
dB
Symbol
Test Conditions
Min
Typ
Max
Unit
h
fe
h
ie
h
oe
h
re
f = 1kHz, V
CE
= 3V, I
C
= 1mA
110
3.5
15.6
1.8x10
–4
kΩ
µmhos
Y
fe
Y
ie
Y
oe
f = 1kHz, V
CE
= 3V, I
C
= 1mA
31–j1.5
0.3+j0.04
0.001+j0.03