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M25P80-VMN3TG 参数 Datasheet PDF下载

M25P80-VMN3TG图片预览
型号: M25P80-VMN3TG
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位,低电压,串行闪存与75 MHz的SPI总线接口 [8 Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 52 页 / 995 K
品牌: NUMONYX [ NUMONYX B.V ]
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M25P80  
DC and AC parameters  
(1)  
Table 16. AC characteristics (25 MHz operation, Grade 3) (continued)  
Test conditions specified in Table 10 and Table 12  
Symbol  
Alt.  
Parameter  
Sector Erase cycle time  
Bulk Erase cycle time  
Min.  
Typ.  
Max.  
Unit  
(6)  
tSE  
0.8  
10  
3
s
s
(6)  
tBE  
20  
1. Preliminary data.  
2. tCH + tCL must be greater than or equal to 1/ fC  
3. Value guaranteed by characterization, not 100% tested in production.  
4. Expressed as a slew-rate.  
5. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.  
6. Typical values given for TA = 85 °C.  
7. int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.  
Figure 22. Serial input timing  
tSHSL  
S
C
tCHSL  
tSLCH  
tCHSH  
tSHCH  
tDVCH  
tCHCL  
tCHDX  
tCLCH  
MSB IN  
LSB IN  
D
Q
High Impedance  
AI01447C  
43/52