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M25PE20-VMN6P 参数 Datasheet PDF下载

M25PE20-VMN6P图片预览
型号: M25PE20-VMN6P
PDF下载: 下载PDF文件 查看货源
内容描述: 1和2兆,页擦除串行闪存与字节变性, 75兆赫的SPI总线,标准引脚 [1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 64 页 / 1231 K
品牌: NUMONYX [ NUMONYX B.V ]
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M25PE20
M25PE10
1 and 2 Mbit, page-erasable serial Flash memories
with byte alterability, 75 MHz SPI bus, standard pinout
Features
1 or 2 Mbit of page-erasable Flash memory
2.7 V to 3.6 V single supply voltage
SPI bus compatible serial interface
75 MHz clock rate (maximum)
Page size: 256 bytes
– Page Write in 11 ms (typical)
– Page Program in 0.8 ms (typical)
– Page Erase in 10 ms (typical)
SubSector Erase (32 Kbits)
Sector Erase (512 Kbits)
Bulk Erase (1 Mbit for M25PE10, 2 Mbits for
M25PE20)
Deep Power-down mode 1 µA (typical)
Electronic signature
– JEDEC standard two-byte signature
(8012h for M25PE20, 8011h for M25PE10)
– Unique ID code (UID) with 16 bytes read-
only, available upon customer request only
in the T9HX process
Software write protection on a 64-Kbyte sector
basis
More than 100 000 Write cycles
More than 20 years data retention
Hardware write protection of the memory area
selected using the BP0 and BP1 bits
Package
– ECOPACK® (RoHS compliant)
VFQFPN8 (MP)
6 × 5 mm
SO8N (MN)
150 mil width
March 2008
Rev 5
1/64
1