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M25PE40-VMN6TP 参数 Datasheet PDF下载

M25PE40-VMN6TP图片预览
型号: M25PE40-VMN6TP
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位,页擦除串行闪存与字节变性, 75兆赫的SPI总线,标准引脚 [4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout]
分类和应用: 闪存
文件页数/大小: 62 页 / 1298 K
品牌: NUMONYX [ NUMONYX B.V ]
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M25PE40
Signal description
2.6
Write Protect (W) or Top Sector Lock (TSL)
The Write Protect function is available in the T9HX process only
(see
The Write Protect (W) input is used to freeze the size of the area of memory that is
protected against write, program and erase instructions (as specified by the values in
the BP2, BP1 and BP0 bits of the Status Register. See
for a description of these bits.
The Top Sector Lock function is available in the T7X process only (see
The input signal sets the device in the Hardware Protected mode, when Top Sector
Lock (TSL) is connected to V
SS
, causing the top 256 pages (upper addresses) of the
memory to become read-only (protected from write, program and erase operations).
When Top Sector Lock (TSL) is connected to V
CC
, the top 256 pages of memory
behave like the other pages of memory.
2.7
V
CC
supply voltage
V
CC
is the supply voltage.
2.8
V
SS
ground
V
SS
is the reference for the V
CC
supply voltage.
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