M28W640HCT70ZB6F 参数 Datasheet PDF下载

M28W640HCT

M28W640HCB

64 Mbit (4 Mb x 16, boot block)

3 V supply Flash memory

Preliminary Data

Features

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Supply voltage

– V

DD

= 2.7 V to 3.6 V

– V

PP

= 12 V for fast program (optional)

Access times: 70 ns

Asynchronous Page Read mode

– Page width: 4 words

– Page access: 25 ns

– Random access: 70 ns

Programming time:

– 10 µs typical

– Double Word Programming option

– Quadruple Word Programming option

Common Flash interface

Memory blocks

– Parameter blocks (top or bottom location)

– Main blocks

Block locking

– All blocks locked at power-up

– Any combination of blocks can be locked

– WP for block lock-down

Security

– 128 bit user programmable OTP cells

– 64 bit unique device identifier

Automatic standby mode

Program and Erase Suspend

100,000 program/erase cycles per block

Electronic signature

– Manufacturer code: 20h

– Top device code, M28W640HCT: 8848h

– Bottom device code, M28W640HCB:

8849h

FBGA

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TFBGA48 (ZB)

6.39 x 10.5 mm

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TSOP48 (N)

12 x 20 mm

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Packages

– ECOPACK® compliant

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March 2008

Rev 2

1/72

1

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.