M29DW128F
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block)
3V supply Flash memory
Feature summary
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Supply voltage
– V
CC
= 2.7V to 3.6V for Program, Erase and
Read
– V
PP
=12V for Fast Program (optional)
Asynchronous Random/Page Read
– Page width: 8 Words
– Page access: 25, 30ns
– Random access: 60, 70ns
Programming time
– 10µs per Byte/Word typical
– 4 Words / 8 Bytes Program
– 32-Word Write Buffer
Erase Verify
Memory blocks
– Quadruple Bank Memory Array:
16Mbit+48Mbit+48Mbit+16Mbit
– Parameter Blocks (at Top and Bottom)
Dual Operation
– While Program or Erase in one bank, Read
in any of the other banks
Program/Erase Suspend and Resume modes
– Read from any Block during Program
Suspend
– Read and Program another Block during
Erase Suspend
Unlock Bypass Program
– Faster Production/Batch Programming
Common Flash Interface
– 64 bit Security Code
100,000 Program/Erase cycles per block
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TSOP56 (NF)
14 x 20mm
BGA
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TBGA64 (ZA)
10 x 13mm
Low power consumption
– Standby and Automatic Standby
Hardware Block Protection
– V
PP
/WP Pin for fast program and write
protect of the four outermost parameter
blocks
Security features
– Standard Protection
– Password Protection
Extended Memory Block
– Extra block used as security block or to
store additional information
Electronic Signature
– Manufacturer Code: 0020h
– Device Code: 227Eh + 2220h + 2200h
ECOPACK
®
packages available
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December 2007
Rev 8
1/94
1
NUMONYX [ NUMONYX B.V ]
