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M29DW128F70ZA6E 参数 Datasheet PDF下载

M29DW128F70ZA6E图片预览
型号: M29DW128F70ZA6E
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆位( 16Mb的X8或X16 8Mb的,多行,页,引导块) 3V供应闪存 [128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 94 页 / 1791 K
品牌: NUMONYX [ NUMONYX B.V ]
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Summary description  
M29DW128F  
1
Summary description  
The M29DW128F is a 128 Mbit (16Mb x8 or 8Mb x16) non-volatile memory that can be  
read, erased and reprogrammed. These operations can be performed using a single low  
voltage (2.7 to 3.6V) supply. At Power-up the memory defaults to its Read mode.  
The M29DW128F features an asymmetrical block architecture, with 16 parameter and 254  
main blocks, divided into four Banks, A, B, C and D, providing multiple Bank operations.  
While programming or erasing in one bank, read operations are possible in any other bank.  
The bank architecture is summarized in Table 2. Eight of the Parameter Blocks are at the top  
of the memory address space, and eight are at the bottom.  
Program and Erase commands are written to the Command Interface of the memory. An on-  
chip Program/Erase Controller simplifies the process of programming or erasing the  
memory by taking care of all of the special operations that are required to update the  
memory contents. The end of a program or erase operation can be detected and any error  
conditions identified. The command set required to control the memory is consistent with  
JEDEC standards. The Chip Enable, Output Enable and Write Enable signals control the  
bus operations of the memory. They allow simple connection to most microprocessors, often  
without additional logic.  
The device supports Asynchronous Random Read and Page Read from all blocks of the  
memory array.  
The M29DW128F has one extra 256 byte block (Extended Block) that can be accessed  
using a dedicated command. The Extended Block can be protected and so is useful for  
storing security information. However the protection is irreversible, once protected the  
protection cannot be undone.  
Each block can be erased independently, so it is possible to preserve valid data while old  
data is erased.  
The device features four different levels of hardware and software block protection to avoid  
unwanted program or erase (modify). The software block protection features are available in  
16 bit memory organization only:  
Hardware Protection:  
The VPP/WP provides a hardware protection of the four outermost parameter  
blocks (two at the top and two at the bottom of the address space).  
The RP pin temporarily unprotects all the blocks previously protected using a High  
Voltage Block Protection technique (see Appendix D: High Voltage Block  
Protection).  
Software Protection  
Standard Protection  
Password Protection  
The memory is offered in TSOP56 (14 x 20mm) and TBGA64 (10 x 13mm, 1mm pitch)  
packages. The 8-bit Bus mode is only available when the M29DW128F is delivered in  
TSOP56 package. In order to meet environmental requirements, Numonyx offers the  
M29DW128F in ECOPACK® packages. ECOPACK packages are Lead-free. The category of  
second Level Interconnect is marked on the package and on the inner box label, in  
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  
conditions are also marked on the inner box label. The memory is supplied with all the bits  
erased (set to ’1’).  
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