M29DW128G
128 Mbit (8 Mb x 16, multiple bank, page, dual boot)
3 V supply Flash memory
Data Brief
Features
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Supply voltage
– V
CC
= 2.7 to 3.6 V for Program, Erase and
Read
– V
PP
=12 V for Fast Program (optional)
Asynchronous Random/Page Read
– Page width: 8 words
– Page access: 25 ns
– Random access: 60 ns
Programming time
– 15 µs per byte/word (typical)
– 32-word write buffer
Erase verify
Memory blocks
– Quadruple bank memory array:
16 Mbit+48 Mbit+48 Mbit+16 Mbit
– Parameter blocks (at top and bottom)
Dual operation
– While Program or Erase in one bank, Read
in any of the other banks
Program/Erase Suspend and Resume modes
– Read from any block during Program
Suspend
– Read and Program another block during
Erase Suspend
Unlock Bypass Program
– Faster production/batch programming
Common Flash interface
– 64 bit security code
100,000 Program/Erase cycles per block
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TSOP56 (NF)
14 x 20 mm
BGA
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TBGA64 (ZA)
10 x 13 mm
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Low power consumption
– Standby and automatic standby
Hardware block protection
– V
PP
/WP pin for fast program and write
protect of the four outermost parameter
blocks
Security features
– Standard protection
– Password protection
– Additional block protection
Extended memory block
– Extra block used as security block or to
store additional information
Electronic signature
– Manufacturer code: 0020h
– Device code: 227Eh+2220h+2200h
ECOPACK
®
packages available
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December 2007
Rev 2
1/11
1
For further information contact your local STMicroelectronics sales office.
NUMONYX [ NUMONYX B.V ]
