欢迎访问ic37.com |
会员登录 免费注册
发布采购

M29DW324DB90N6E 参数 Datasheet PDF下载

M29DW324DB90N6E图片预览
型号: M29DW324DB90N6E
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位(4MB X8或X16的2Mb ,双行16:16 ,引导块) 3V供应闪存 [32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 50 页 / 1295 K
品牌: NUMONYX [ NUMONYX B.V ]
 浏览型号M29DW324DB90N6E的Datasheet PDF文件第36页浏览型号M29DW324DB90N6E的Datasheet PDF文件第37页浏览型号M29DW324DB90N6E的Datasheet PDF文件第38页浏览型号M29DW324DB90N6E的Datasheet PDF文件第39页浏览型号M29DW324DB90N6E的Datasheet PDF文件第41页浏览型号M29DW324DB90N6E的Datasheet PDF文件第42页浏览型号M29DW324DB90N6E的Datasheet PDF文件第43页浏览型号M29DW324DB90N6E的Datasheet PDF文件第44页  
M29DW324DT, M29DW324DB
Table 27. CFI Query System Interface Information
Address
Data
x16
1Bh
x8
36h
0027h
V
CC
Logic Supply Minimum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V
CC
Logic Supply Maximum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V
PP
[Programming] Supply Minimum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
V
PP
[Programming] Supply Maximum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
Typical timeout per single byte/word program = 2
n
µs
Typical timeout for minimum size write buffer program = 2
n
µs
Typical timeout per individual block erase = 2
n
ms
Typical timeout for full Chip Erase = 2
n
ms
Maximum timeout for byte/word program = 2
n
times typical
Maximum timeout for write buffer program = 2
n
times typical
Maximum timeout per individual block erase = 2
n
times typical
Maximum timeout for Chip Erase = 2
n
times typical
2.7V
Description
Value
1Ch
38h
0036h
3.6V
1Dh
3Ah
00B5h
11.5V
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
3Ch
3Eh
40h
42h
44h
46h
48h
4Ah
4Ch
00C5h
0004h
0000h
000Ah
0000h
0004h
0000h
0003h
0000h
12.5V
16µs
NA
1s
NA
256 µs
NA
8s
NA
Table 28. Device Geometry Definition
Address
Data
x16
27h
28h
29h
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
x8
4Eh
50h
52h
54h
56h
58h
5Ah
5Ch
5Eh
60h
62h
64h
66h
68h
0016h
0002h
0000h
0000h
0000h
0002h
0007h
0000h
0020h
0000h
003Eh
0000h
0000h
0001h
Device Size = 2
n
in number of bytes
Flash Device Interface Code description
Maximum number of bytes in multi-byte program or page = 2
n
Number of Erase Block Regions. It specifies the number of
regions containing contiguous Erase Blocks of the same size.
Region 1 Information
Number of Erase Blocks of identical size = 0007h+1
Region 1 Information
Block size in Region 1 = 0020h * 256 byte
Region 2 Information
Number of Erase Blocks of identical size = 003Eh+1
Region 2 Information
Block size in Region 2 = 0100h * 256 byte
4 MByte
x8, x16
Async.
NA
2
8
8Kbyte
63
64Kbyte
Description
Value
Note: For the M29DW324DB, Region 1 corresponds to addresses 000000h to 007FFFh and Region 2 to addresses 008000h to 1FFFFFh.
For the M29DW324DT, Region 1 corresponds to addresses 1F8000h to 1FFFFFh and Region 2 to addresses 000000h to 1F7FFFh.
40/50