M29W064FT
M29W064FB
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block)
3 V supply Flash memory
Preliminary Data
Features
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Supply voltage
– V
CC
= 2.7 V to 3.6 V for program, erase,
read
– V
PP
=12 V for fast program (optional)
Asynchronous random/page read
– Page width: 4 words
– Page access: 25 ns
– Random access: 60, 70 ns
Programming time
– 10 µs per byte/word typical
– 4 words/8 bytes program
135 memory blocks
– 1 boot block and 7 parameter blocks,
8 Kbytes each (top or bottom location)
– 127 main blocks, 64 Kbytes each
Program/erase controller
– Embedded byte/word program algorithms
Program/erase suspend and resume
– Read from any block during program
suspend
– Read and program another block during
erase suspend
Unlock Bypass Program command
– Faster production/batch programming
V
PP
/WP pin for fast program and write protect
Temporary block unprotection mode
Common Flash interface
– 64-bit security code
Device summary
Root part number
M29W064FT
M29W064FB
Device code
22EDh
22FDh
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TSOP48 (N)
12 x 20 mm
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100,000 program/erase cycles per block
Extended memory block
– Extra block used as security block or to
store additional information
Low power consumption
– Standby and automatic standby
Electronic signature
– Manufacturer code: 0020h
Automotive device grade 3
– Temperature: -40 to 125
°C
– Automotive grade certified (AEC-Q100)
ECOPACK
®
packages
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Table 1.
March 2008
Rev 2
1/69
1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.