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M29W064FT70N3F 参数 Datasheet PDF下载

M29W064FT70N3F图片预览
型号: M29W064FT70N3F
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位( 8兆比特×8或4兆位×16 ,网页,引导块) 3 V电源闪存 [64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 69 页 / 1265 K
品牌: NUMONYX [ NUMONYX B.V ]
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M29W064FT, M29W064FB  
Command interface  
4.1.10  
Program command  
The Program command can be used to program a value to one address in the memory array  
at a time. The command requires four bus write operations, the final write operation latches  
the address and data, and starts the program/erase controller.  
Programming can be suspended and then resumed by issuing a Program Suspend  
command and a Program Resume command, respectively (see Section 4.1.8: Program  
Suspend command and Section 4.1.9: Program Resume command).  
If the address falls in a protected block then the Program command is ignored, the data  
remains unchanged. The status register is never read and no error condition is given.  
During the program operation the memory will ignore all commands. It is not possible to  
issue any command to abort or pause the operation. Typical program times are given in  
Table 8: Program, erase times and program, erase endurance cycles. Bus read operations  
during the program operation will output the status register on the data inputs/outputs. See  
the section on the status register for more details.  
After the program operation has completed the memory will return to the read mode, unless  
an error has occurred. When an error occurs the memory will continue to output the status  
register. A Read/Reset command must be issued to reset the error condition and return to  
read mode.  
Note that the Program command cannot change a bit set to ’0’ back to ’1’. One of the erase  
commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’.  
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