M29W128GH
M29W128GL
128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block)
3 V supply Flash memory
Features
■
Supply voltage
– V
CC
= 2.7 to 3.6 V for Program, Erase and
Read
– V
CCQ
= 1.65 to 3.6 V for I/O buffers
– V
PPH
= 12 V for Fast Program (optional)
Asynchronous Random/Page Read
– Page size: 8 words or 16 bytes
– Page access: 25, 30 ns
– Random access: 60 (only available upon
customer request) or 70, 80 ns
Fast Program commands
– 32 words (64-byte write buffer)
Enhanced Buffered Program commands
– 256 words
Programming time
– 16 µs per byte/word typical
– Chip program time: 5 s with V
PPH
and 8 s
without V
PPH
Memory organization
– M29128GH/L: 128 main blocks,
128 Kbytes/64 Kwords each
Program/Erase controller
– Embedded byte/word program algorithms
Program/ Erase Suspend and Resume
– Read from any block during Program
Suspend
– Read and Program another block during
Erase Suspend
■
TSOP56 (N)
14 x 20 mm
■
BGA
TBGA64 (ZA)
10 x 13 mm
■
■
■
– Faster Production/Batch Programming
– Faster Block and Chip Erase
V
PP
/WP pin for Fast Program and Write:
protects first or last block regardless of block
protection settings
Software protection:
– Volatile protection
– Non-volatile protection
– Password protection
Common Flash interface
– 64 bit security code
128 word extended memory block
– Extra block used as security block or to
store additional information
Low power consumption
– Standby and automatic standby
Minimum 100,000 Program/Erase cycles per
block
ECOPACK
®
packages
■
■
■
■
■
■
■
■
■
■
Unlock Bypass/Block Erase/Chip Erase/Write
to Buffer/Enhanced Buffered Program
commands
Table 1.
Device summary
Root part number
M29W128GH: uniform, last block protected by V
PP
/WP
M29W128GL: uniform, first block protected by V
PP
/WP
Device code
227Eh + 2221h + 2201h
227Eh + 2221h + 2200h
March 2008
Rev 4
1/94
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