M29W160ET
M29W160EB
16 Mbit (2Mb x8 or 1Mb x16, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
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SUPPLY VOLTAGE
Figure 1. Packages
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V
CC
= 2.7V to 3.6V for Program, Erase
and Read
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ACCESS TIMES: 70, 90ns
PROGRAMMING TIME
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10µs per Byte/Word typical
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35 MEMORY BLOCKS
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1 Boot Block (Top or Bottom Location)
2 Parameter and 32 Main Blocks
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PROGRAM/ERASE CONTROLLER
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Embedded Byte/Word Program
algorithms
TSOP48 (N)
12 x 20mm
ERASE SUSPEND and RESUME MODES
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Read and Program another Block during
Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
Faster Production/Batch Programming
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FBGA
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TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
TFBGA48 (ZA)
6 x 8mm
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64 bit Security Code
LOW POWER CONSUMPTION
Standby and Automatic Standby
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100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
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Manufacturer Code: 0020h
Top Device Code M29W160ET: 22C4h
Bottom Device Code M29W160EB: 2249h
March 2008
1/40
NUMONYX [ NUMONYX B.V ]
