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M29W160EB70ZA6E 参数 Datasheet PDF下载

M29W160EB70ZA6E图片预览
型号: M29W160EB70ZA6E
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位(2MB ×8或1Mb的X16 ,引导块) 3V供应闪存 [16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 40 页 / 1035 K
品牌: NUMONYX [ NUMONYX B.V ]
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M29W160ET, M29W160EB  
SIGNAL DESCRIPTIONS  
See Figure 2, Logic Diagram, and Table 1, Signal  
Names, for a brief overview of the signals connect-  
ed to this device.  
Address Inputs (A0-A19). The Address Inputs  
select the cells in the memory array to access dur-  
ing Bus Read operations. During Bus Write opera-  
tions they control the commands sent to the  
Command Interface of the Program/Erase Con-  
troller.  
Data Inputs/Outputs (DQ0-DQ7). The Data In-  
puts/Outputs output the data stored at the selected  
address during a Bus Read operation. During Bus  
Write operations they represent the commands  
sent to the Command Interface of the Program/  
Erase Controller.  
Read and Bus Write operations after t  
RHEL  
Output section, Table 15 and Figure 14, Reset/  
Temporary Unprotect AC Characteristics for more  
details.  
or  
PHEL  
t
, whichever occurs last. See the Ready/Busy  
Holding RP at V will temporarily unprotect the  
ID  
protected Blocks in the memory. Program and  
Erase operations on all blocks will be possible.  
The transition from V to V must be slower than  
IH  
ID  
t
.
PHPHH  
Ready/Busy Output (RB). The Ready/Busy pin  
is an open-drain output that can be used to identify  
when the device is performing a Program or Erase  
operation. During Program or Erase operations  
Ready/Busy is Low, V . Ready/Busy is high-im-  
OL  
pedance during Read mode, Auto Select mode  
Data Inputs/Outputs (DQ8-DQ14). The Data In-  
puts/Outputs output the data stored at the selected  
address during a Bus Read operation when BYTE  
and Erase Suspend mode.  
After a Hardware Reset, Bus Read and Bus Write  
operations cannot begin until Ready/Busy be-  
comes high-impedance. See Table 15 and Figure  
14, Reset/Temporary Unprotect AC Characteris-  
tics.  
The use of an open-drain output allows the Ready/  
Busy pins from several memories to be connected  
to a single pull-up resistor. A Low will then indicate  
that one, or more, of the memories is busy.  
is High, V . When BYTE is Low, V , these pins  
IH  
IL  
are not used and are high impedance. During Bus  
Write operations the Command Register does not  
use these bits. When reading the Status Register  
these bits should be ignored.  
Data Input/Output or Address Input (DQ15A-1).  
When BYTE is High, V , this pin behaves as a  
IH  
Data Input/Output pin (as DQ8-DQ14). When  
BYTE is Low, V , this pin behaves as an address  
Byte/Word Organization Select (BYTE). The  
Byte/Word Organization Select pin is used to  
switch between the 8-bit and 16-bit Bus modes of  
the memory. When Byte/Word Organization Se-  
IL  
pin; DQ15A–1 Low will select the LSB of the Word  
on the other addresses, DQ15A–1 High will select  
the MSB. Throughout the text consider references  
to the Data Input/Output to include this pin when  
BYTE is High and references to the Address In-  
puts to include this pin when BYTE is Low except  
when stated explicitly otherwise.  
lect is Low, V , the memory is in 8-bit mode, when  
IL  
it is High, V , the memory is in 16-bit mode.  
IH  
V
Supply Voltage. The V  
Supply Voltage  
CC  
CC  
supplies the power for all operations (Read, Pro-  
Chip Enable (E). The Chip Enable, E, activates  
the memory, allowing Bus Read and Bus Write op-  
erations to be performed. When Chip Enable is  
gram, Erase etc.).  
The Command Interface is disabled when the V  
Supply Voltage is less than the Lockout Voltage,  
CC  
High, V , all other pins are ignored.  
IH  
V
. This prevents Bus Write operations from ac-  
LKO  
Output Enable (G). The Output Enable, G, con-  
trols the Bus Read operation of the memory.  
cidentally damaging the data during power up,  
power down and power surges. If the Program/  
Erase Controller is programming or erasing during  
this time then the operation aborts and the memo-  
ry contents being altered will be invalid.  
Write Enable (W). The Write Enable, W, controls  
the Bus Write operation of the memory’s Com-  
mand Interface.  
Reset/Block Temporary Unprotect (RP). The  
Reset/Block Temporary Unprotect pin can be  
used to apply a Hardware Reset to the memory or  
to temporarily unprotect all Blocks that have been  
protected.  
A 0.1µF capacitor should be connected between  
the V  
Supply Voltage pin and the V Ground  
SS  
CC  
pin to decouple the current surges from the power  
supply. The PCB track widths must be sufficient to  
carry the currents required during program and  
erase operations, I  
.
CC3  
A Hardware Reset is achieved by holding Reset/  
V
Ground. The V Ground is the reference for  
SS  
SS  
Block Temporary Unprotect Low, V , for at least  
IL  
all voltage measurements. The two V pins of the  
SS  
t
. After Reset/Block Temporary Unprotect  
goes High, V , the memory will be ready for Bus  
PLPX  
device must be connected to the system ground.  
IH  
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