M29W160ET, M29W160EB
Table 23. CFI Query System Interface Information
Address
Data
x16
1Bh
x8
36h
0027h
V
CC
Logic Supply Minimum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V
CC
Logic Supply Maximum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V
PP
[Programming] Supply Minimum Program/Erase voltage
V
PP
[Programming] Supply Maximum Program/Erase voltage
Typical timeout per single Byte/Word program = 2
n
µs
Typical timeout for minimum size write buffer program = 2
n
µs
Typical timeout per individual block erase = 2
n
ms
Typical timeout for full chip erase = 2
n
ms
Maximum timeout for Byte/Word program = 2
n
times typical
Maximum timeout for write buffer program = 2
n
times typical
Maximum timeout per individual block erase = 2
n
times typical
Maximum timeout for chip erase = 2
n
times typical
2.7V
Description
Value
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
38h
3Ah
3Ch
3Eh
40h
42h
44h
46h
48h
4Ah
4Ch
0036h
0000h
0000h
0004h
0000h
000Ah
0000h
0004h
0000h
0003h
0000h
3.6V
NA
NA
16µs
NA
1s
NA
256µs
NA
8s
NA
31/40
NUMONYX [ NUMONYX B.V ]
