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M29W160ET90ZA6E 参数 Datasheet PDF下载

M29W160ET90ZA6E图片预览
型号: M29W160ET90ZA6E
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位(2MB ×8或1Mb的X16 ,引导块) 3V供应闪存 [16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 40 页 / 1035 K
品牌: NUMONYX [ NUMONYX B.V ]
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M29W160ET, M29W160EB
Table 24. Device Geometry Definition
Address
Data
x16
27h
28h
29h
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
3Ch
x8
4Eh
50h
52h
54h
56h
58h
5Ah
5Ch
5Eh
60h
62h
64h
66h
68h
6Ah
6Ch
6Eh
70h
72h
74h
76h
78h
0015h
0002h
0000h
0000h
0000h
0004h
0000h
0000h
0040h
0000h
0001h
0000h
0020h
0000h
0000h
0000h
0080h
0000h
001Eh
0000h
0000h
0001h
Device Size = 2
n
in number of Bytes
Flash Device Interface Code description
Maximum number of Bytes in multi-Byte program or page = 2
n
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing
contiguous Erase Blocks of the same size.
Region 1 Information
Number of identical size erase block = 0000h+1
Region 1 Information
Block size in Region 1 = 0040h * 256 Byte
Region 2 Information
Number of identical size erase block = 0001h+1
Region 2 Information
Block size in Region 2 = 0020h * 256 Byte
Region 3 Information
Number of identical size erase block = 0000h+1
Region 3 Information
Block size in Region 3 = 0080h * 256 Byte
Region 4 Information
Number of identical-size erase block = 001Eh+1
Region 4 Information
Block size in Region 4 = 0100h * 256 Byte
2 MByte
x8, x16
Async.
NA
Description
Value
4
1
16 KByte
2
8 KByte
1
32 KByte
31
64 KByte
32/40