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M29W400DT45N1E 参数 Datasheet PDF下载

M29W400DT45N1E图片预览
型号: M29W400DT45N1E
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512 KB ×8或256 KB ×16 ,引导块) 3 V电源闪存 [4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 48 页 / 1025 K
品牌: NUMONYX [ NUMONYX B.V ]
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M29W400DT
M29W400DB
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block)
3 V supply Flash memory
Features
Supply voltage
– V
CC
= 2.7 V to 3.6 V for Program, Erase
and Read
Access time: 45, 55, 70 ns
Programming time
– 10 µs per byte/word typical
11 memory blocks
– 1 boot block (top or bottom location)
– 2 parameter and 8 main blocks
Program/Erase controller
– Embedded byte/word program algorithms
Erase Suspend and Resume modes
– Read and Program another block during
Erase Suspend
Unlock bypass program command
– Faster production/batch programming
Temporary block unprotection mode
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
Electronic signature
– Manufacturer code: 0020h
– Top device code M29W400DT: 00EEh
– Bottom device code M29W400DB: 00EFh
– ECOPACK
®
packages
FBGA
SO44 (M)
(1)
TSOP48 (N)
12 x 20 mm
FBGA
TFBGA48 (ZA)
(1)
6 x 9 mm
TFBGA48 (ZE)
6 x 8 mm
1. These packages are no more in mass production.
December 2007
Rev 6
1/48
1