M29W400DT
M29W400DB
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block)
3 V supply Flash memory
Features
■
Supply voltage
– V
CC
= 2.7 V to 3.6 V for Program, Erase
and Read
Access time: 45, 55, 70 ns
Programming time
– 10 µs per byte/word typical
11 memory blocks
– 1 boot block (top or bottom location)
– 2 parameter and 8 main blocks
Program/Erase controller
– Embedded byte/word program algorithms
Erase Suspend and Resume modes
– Read and Program another block during
Erase Suspend
Unlock bypass program command
– Faster production/batch programming
Temporary block unprotection mode
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
Electronic signature
– Manufacturer code: 0020h
– Top device code M29W400DT: 00EEh
– Bottom device code M29W400DB: 00EFh
– ECOPACK
®
packages
FBGA
■
■
■
SO44 (M)
(1)
TSOP48 (N)
12 x 20 mm
■
■
FBGA
TFBGA48 (ZA)
(1)
6 x 9 mm
■
■
■
■
■
TFBGA48 (ZE)
6 x 8 mm
1. These packages are no more in mass production.
December 2007
Rev 6
1/48
1