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M29W400DT55M6E 参数 Datasheet PDF下载

M29W400DT55M6E图片预览
型号: M29W400DT55M6E
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512 KB ×8或256 KB ×16 ,引导块) 3 V电源闪存 [4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 48 页 / 1025 K
品牌: NUMONYX [ NUMONYX B.V ]
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M29W400DT, M29W400DB  
Bus operations  
3.6  
Special bus operations  
Additional bus operations can be performed to read the electronic signature and also to  
apply and remove block protection. These bus operations are intended for use by  
programming equipment and are not usually used in applications. They require V to be  
ID  
applied to some pins.  
3.7  
3.8  
Electronic signature  
The memory has two codes, the manufacturer code and the device code, that can be read  
to identify the memory. These codes can be read by applying the signals listed in Table 2  
and Table 3, Bus operations.  
Block protection and blocks unprotection  
Each block can be separately protected against accidental Program or Erase. Protected  
blocks can be unprotected to allow data to be changed.  
There are two methods available for protecting and unprotecting the blocks, one for use on  
programming equipment and the other for in-system use. Block Protect and Chip Unprotect  
operations are described in Appendix B: Block protection.  
(1)  
Table 2.  
Bus operations, BYTE = V  
IL  
Data inputs/outputs  
Address inputs  
DQ15A–1, A0-A17  
Operation  
E
G
W
DQ14-DQ8  
DQ7-DQ0  
Bus Read  
Bus Write  
Output Disable  
Standby  
VIL  
VIL  
X
VIL  
VIH  
VIH  
X
VIH Cell address  
Hi-Z  
Hi-Z  
Hi-Z  
Hi-Z  
Data output  
Data input  
Hi-Z  
VIL  
VIH  
X
Command address  
X
VIH  
X
Hi-Z  
A0 = VIL, A1 = VIL,  
VIH A9 = VID,  
others VIL or VIH  
Read  
manufacturer code  
VIL  
VIL  
Hi-Z  
20h  
EEh  
(M29W400DT)  
A0 = VIH, A1 = VIL,  
VIH A9 = VID,  
others VIL or VIH  
Read device code  
VIL  
VIL  
Hi-Z  
EFh  
(M29W400DB)  
1. X = VIL or VIH  
.
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