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M29W400DB45N6F 参数 Datasheet PDF下载

M29W400DB45N6F图片预览
型号: M29W400DB45N6F
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512 KB ×8或256 KB ×16 ,引导块) 3 V电源闪存 [4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 48 页 / 1025 K
品牌: NUMONYX [ NUMONYX B.V ]
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DC and AC parameters
Table 10.
Symbol
C
IN
C
OUT
M29W400DT, M29W400DB
Device capacitance
(1)
Parameter
Input capacitance
Output capacitance
Test Condition
V
IN
= 0 V
V
OUT
= 0 V
Min
Max
6
12
Unit
pF
pF
1. Sampled only, not 100% tested.
Table 11.
Symbol
I
LI
I
LO
I
CC1
I
CC2
I
CC3(1)
V
IL
V
IH
V
OL
V
OH
V
ID
I
ID
V
LKO
DC characteristics
Parameter
Input Leakage current
Output Leakage current
Supply current (Read)
Supply current (Standby)
Supply current
(Program/Erase)
Input Low voltage
Input High voltage
Output Low voltage
Output High voltage
Identification voltage
Identification current
Program/Erase Lockout supply
voltage
A9 = V
ID
1.8
I
OL
= 1.8 mA
I
OH
= –100
µ
A
V
CC
– 0.4
11.5
12.5
100
2.3
Test condition
0 V
V
IN
V
CC
0 V
V
OUT
V
CC
E = V
IL
, G = V
IH
,
f = 6 MHz
E = V
CC
± 0.2 V,
RP = V
CC
± 0.2 V
Program/Erase
controller active
–0.5
0.7V
CC
Min
Max
±1
±1
10
100
20
0.8
V
CC
+ 0.3
0.45
Unit
µ
A
µ
A
mA
µ
A
mA
V
V
V
V
V
µ
A
V
1. Sampled only, not 100% tested.
Figure 11. Read mode AC waveforms
tAVAV
A0-A17/
A–1
tAVQV
E
tELQV
tELQX
G
tGLQX
tGLQV
DQ0-DQ7/
DQ8-DQ15
tBHQV
BYTE
tELBL/tELBH
tBLQZ
AI02907
VALID
tAXQX
tEHQX
tEHQZ
tGHQX
tGHQZ
VALID
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