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M29W640FB70N6E 参数 Datasheet PDF下载

M29W640FB70N6E图片预览
型号: M29W640FB70N6E
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位(8MB X8或X16 4Mb的,页,引导块) 3V供应闪存 [64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 71 页 / 1409 K
品牌: NUMONYX [ NUMONYX B.V ]
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Signal descriptions  
M29W640FT, M29W640FB  
2.12  
VCC Supply Voltage (2.7V to 3.6V)  
V
provides the power supply for all operations (Read, Program and Erase).  
CC  
The Command Interface is disabled when the V Supply voltage is less than the Lockout  
CC  
Voltage, V  
. This prevents Bus Write operations from accidentally damaging the data  
LKO  
during power up, power down and power surges. If the Program/Erase Controller is  
programming or erasing during this time then the operation aborts and the memory contents  
being altered will be invalid.  
A 0.1µF capacitor should be connected between the V Supply voltage pin and the V  
CC  
SS  
Ground pin to decouple the current surges from the power supply. The PCB track widths  
must be sufficient to carry the currents required during Program and Erase operations, I  
.
CC3  
2.13  
VSS Ground  
V
is the reference for all voltage measurements. The device features two V pins which  
SS  
SS  
must be both connected to the system ground.  
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