M29W640FT
M29W640FB
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block)
3V Supply Flash Memory
Feature summary
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Supply voltage
– V
CC
= 2.7V to 3.6V for Program, Erase,
Read
– V
PP
=12 V for Fast Program (optional)
Asynchronous Random/Page Read
– Page Width: 4 Words
– Page Access: 25ns
– Random Access: 60ns, 70ns
Programming time
– 10µs per Byte/Word typical
– 4 Words / 8 Bytes Program
135 Memory Blocks
– 1 Boot Block and 7 Parameter Blocks,
8 KBytes each (Top or Bottom location)
– 127 Main Blocks, 64 KBytes each
Program/Erase Controller
– Embedded Byte/Word Program algorithms
Program/Erase Suspend and Resume
– Read from any Block during Program
Suspend
– Read and Program another Block during
Erase Suspend
Unlock Bypass Program command
– Faster Production/Batch Programming
V
PP
/WP pin for Fast Program and Write Protect
Temporary Block Unprotection mode
Common Flash Interface
– 64-bit Security Code
Device Codes
Root Part Number
M29W640FT
M29W640FB
Device Code
22EDh
22FDh
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TSOP48 (N)
12 x 20mm
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FBGA
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TFBGA48 (ZA)
6x8mm
Extended Memory Block
Extra block used as security block or to store
additional information
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
Electronic Signature
– Manufacturer Code: 0020h
ECOPACK
®
packages
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Table 1.
December 2007
Rev 7
1/71
1
NUMONYX [ NUMONYX B.V ]
