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M29W640GH70NB6E 参数 Datasheet PDF下载

M29W640GH70NB6E图片预览
型号: M29W640GH70NB6E
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位(8MB X8或X16 4Mb的,页) 3V供应闪存 [64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 90 页 / 1676 K
品牌: NUMONYX [ NUMONYX B.V ]
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M29W640GH, M29W640GL, M29W640GT, M29W640GB  
Signal descriptions  
2.7  
2.8  
Write Enable (W)  
The Write Enable, W, controls the Bus Write operation of the memory’s Command Interface.  
VPP/Write Protect (VPP/WP)  
The V /Write Protect pin provides two functions. The V function allows the memory to  
PP  
PP  
use an external high voltage power supply to reduce the time required for Unlock Bypass  
Program operations. The Write Protect performs hardware protection:  
It protects the first and last block on M29W640GH and M29W640GL devices.  
It protects the first two and the last two boot blocks on M29W640GT and M29W640GB  
devices.  
The V /Write Protect pin may be left floating or unconnected (see Table 17: DC  
PP  
characteristics).  
When V /Write Protect is Low, V , the two outermost (M29W640GH and M29W640GL) or  
PP  
IL  
four outermost blocks (M29W640GT and M29W640GB) are protected. Program and Erase  
operations in this block are ignored while V /Write Protect is Low, even when RP is at V .  
PP  
ID  
When V /Write Protect is High, V , the memory reverts to the previous protection status  
PP  
IH  
of the outermost blocks. Program and Erase operations can now modify the data in the  
outermost blocks unless the block is protected using Block Protection.  
Applying 12V to the V /WP pin will temporarily unprotect any block previously protected  
PP  
(including the outermost blocks) using a High Voltage Block Protection technique (In-  
System or Programmer technique). See Table 6: Hardware Protection for details.  
When V /Write Protect is raised to V the memory automatically enters the Unlock  
PP  
PP  
Bypass mode. When V /Write Protect returns to V or V normal operation resumes.  
PP  
IH  
IL  
During Unlock Bypass Program operations the memory draws I from the pin to supply the  
PP  
programming circuits. See the description of the Unlock Bypass command in the Command  
Interface section. The transitions from V to V and from V to V must be slower than  
IH  
PP  
PP  
IH  
t
, see Figure 18: Accelerated Program Timing waveforms.  
VHVPP  
Never raise V /Write Protect to V from any mode except Read mode, otherwise the  
PP  
PP  
memory may be left in an indeterminate state.  
A 0.1µF capacitor should be connected between the V /Write Protect pin and the V  
PP  
SS  
Ground pin to decouple the current surges from the power supply. The PCB track widths  
must be sufficient to carry the currents required during Unlock Bypass Program, I .  
PP  
Table 6.  
VPP/WP  
Hardware Protection  
RP  
Function  
M29W640GT and  
M29W640GB  
4 outermost parameter blocks protected from  
Program/Erase operations  
VIH  
M29W640GH and  
M29W640GL  
2 outermost blocks protected from Program/Erase  
operations  
VIL  
M29W640GT and  
M29W640GB  
All blocks temporarily unprotected except the 4 outermost  
blocks  
VID  
M29W640GH and  
M29W640GL  
All blocks temporarily unprotected except the 2 outermost  
blocks  
15/90