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M29W640GH70NB6E 参数 Datasheet PDF下载

M29W640GH70NB6E图片预览
型号: M29W640GH70NB6E
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位(8MB X8或X16 4Mb的,页) 3V供应闪存 [64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 90 页 / 1676 K
品牌: NUMONYX [ NUMONYX B.V ]
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Flowchart  
M29W640GH, M29W640GL, M29W640GT, M29W640GB  
1. n+1 is the number of addresses to be programmed.  
2. A Write to Buffer and Program Abort and Reset must be issued to return the device in Read mode.  
3. When the block address is specified, any address in the selected block address space is acceptable. However when  
loading Write Buffer address with data, all addresses must fall within the selected Write Buffer page.  
4. DQ7 must be checked since DQ5 and DQ7 may change simultaneously.  
5. If this flowchart location is reached because DQ5=’1’, then the Write to Buffer and Program command failed. If this  
flowchart location is reached because DQ1=’1’, then the Write to Buffer and Program command aborted. In both cases, the  
appropriate reset command must be issued to return the device in Read mode: a Reset command if the operation failed, a  
Write to Buffer and Program Abort and Reset command if the operation aborted.  
6. See Table 10 and Table 11, for details on Write to Buffer and Program command sequence.  
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