Command Interface
M29W640GH, M29W640GL, M29W640GT, M29W640GB
Table 12. Program, Erase times and endurance cycles
Parameter Symbol
Min
Typ(1)(2)
Max(2)
Unit
Chip Erase
80
400(3)
s
Block Erase (64 Kbytes)(4)(5)
tWHWH2
0.5
s
Erase Suspend Latency Time
50(6)
200(3)
200(3)
200(3)
200(3)
µs
µs
µs
µs
µs
µs
µs
Program (byte or word)
10
10
Double Byte
Double Word /Quadruple Byte Program
Quadruple Word / Octuple Byte Program
Single Byte and Word Program(7)
32 Byte/16 Word Program using Write to Buffer and Program
10
10
tWHWH1
10
180
32 Byte/16 Word Program using Write to Buffer and Program
(VPP/WP = 12V)
45
µs
Chip Program (byte by byte)
80
40
20
10
400(3)
200(3)
100(3)
50(3)
4
s
Chip Program (word by word)
s
s
Chip Program (Double Word/Quadruple Byte Program)
Chip Program (Quadruple Word/Octuple Byte Program)
Program Suspend Latency Time
Program/Erase Cycles (per Block)
Data Retention
s
µs
100,000
20
cycles
years
1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles.
4. This time does not include the pre-programming time.
5. Block erase polling cycle time (see Figure 19).
6. Maximum value measured at worst case conditions for both temperature and VCC
.
7. Program polling cycle time (see Figure 6, Figure 7 and Figure 19).
36/90
NUMONYX [ NUMONYX B.V ]
