M36P0R8070E0
256 Mbit (x16, multiple bank, multilevel, burst) Flash memory
128 Mbit (burst) PSRAM, 1.8 V supply, multichip package
Features
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Multichip package
– 1 die of 256 Mbit (16 Mb x 16, multiple
bank, multilevel, burst) Flash memory
– 1 die of 128 Mbit (8 Mb x16) PSRAM
Supply voltage
– V
DDF
= V
CCP
= V
DDQ
= 1.7 to 1.95 V
– V
PPF
= 9 V for fast program (12 V tolerant)
Electronic signature
– Manufacturer code: 20h
– Device code: 8818
Package
– ECOPACK®
Synchronous/asynchronous read
– Synchronous burst read mode:
108 MHz, 66 MHz
– Asynchronous page read mode
– Random access: 93 ns
Programming time
– 4 µs typical Word program time using
Buffer Enhanced Factory Program
command
Memory organization
– Multiple bank memory array: 32 Mbit banks
– Four EFA (extended flash array) blocks of
64 Kbits
Dual operations
– Program/erase in one bank while read in
others
– No delay between read and write
operations
Security
– 64bit unique device number
– 2112 bit user programmable OTP Cells
100 000 program/erase cycles per block
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FBGA
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TFBGA107 (ZAC)
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Flash memory
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Block locking
– All blocks locked at power-up
– Any combination of blocks can be locked
with zero latency
– WP
F
for block lock-down
– Absolute write protection with V
PPF
= V
SS
CFI (common Flash interface)
Access time: 70 ns
Asynchronous page read
– Page size: 4, 8 or 16 words
– Subsequent read within page: 20 ns
Synchronous burst read/write
Low power consumption
– Active current: < 25 mA
– Standby current: 200 µA
– Deep power-down current: 10 µA
Low power features
– PASR (partial array self refresh)
– DPD (deep power-down) mode
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PSRAM
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December 2007
Rev 2
1/22
1
NUMONYX [ NUMONYX B.V ]
