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M36P0R9060E0ZACF 参数 Datasheet PDF下载

M36P0R9060E0ZACF图片预览
型号: M36P0R9060E0ZACF
PDF下载: 下载PDF文件 查看货源
内容描述: 512兆位( X16 ,多银行,多层次,突发)闪存64兆位(突发)的PSRAM , 1.8V电源,多芯片封装 [512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package]
分类和应用: 闪存静态存储器
文件页数/大小: 23 页 / 459 K
品牌: NUMONYX [ NUMONYX B.V ]
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M36P0R9060E0
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory
64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
Feature summary
Multi-Chip Package
– 1 die of 512 Mbit (32Mb x 16, Multiple
Bank, Multi-Level, Burst) Flash memory
– 1
die of 64 Mbit (4Mb x16)
PSRAM
Supply voltage
– V
DDF
= V
CCP
= V
DDQ
= 1.7 to 1.95V
– V
PPF
= 9V for fast program
Electronic signature
– Manufacturer Code: 20h
– Device Code: 8819
ECOPACK® package
Synchronous / asynchronous read
– Synchronous Burst Read mode:
108MHz, 66MHz
– Asynchronous Page Read mode
– Random Access: 96ns
Programming time
– 4.2µs typical Word program time using
Buffer Enhanced Factory Program
command
Memory organization
– Multiple Bank memory array: 64 Mbit banks
– Four Extended Flash Array (EFA) Blocks of
64 Kbits
Dual operations
– program/erase in one Bank while read in
others
– No delay between read and write
operations
Security
– 64 bit unique device number
– 2112 bit user programmable OTP Cells
100,000 Program/erase cycles per block
Common Flash Interface (CFI)
FBGA
TFBGA107 (ZAC)
Flash memory
Block locking
– All Blocks locked at power-up
– Any combination of Blocks can be locked
with zero latency
– WP
F
for Block Lock-Down
– Absolute Write Protection with V
PPF
= V
SS
User-selectable operating modes
– Asynchronous modes: Random Read, and
Write, Page Read
– Synchronous modes: NOR-Flash, Full
Synchronous (Burst Read and Write)
Asynchronous Random Read
– Access time: 70ns
Asynchronous Page Read
– Page size: 4, 8 or 16 Words
– Subsequent Read within Page: 20ns
Burst Read
– Fixed length (4, 8, 16 or 32 Words) or
Continuous
Low power consumption
– Active current: < 25mA
– Standby current: 140µA
– Deep Power-Down current: < 10µA
Low-power features
– Partial Array Self-Refresh (PASR)
– Deep Power-Down (DPD) Mode
– Automatic Temperature-compensated Self-
Refresh
PSRAM
November 2007
Rev. 3
1/23
1