M36P0R9070E0
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory
128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
Feature summary
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Multi-Chip Package
– 1 die of 512 Mbit (32Mb x 16, Multiple
Bank, Multi-Level, Burst) Flash Memory
– 1
die of 128Mbit (8Mb x16)
PSRAM
Supply voltage
– V
DDF
= V
CCP
= V
DDQ
= 1.7 to 1.95V
– V
PPF
= 9V for fast program
Electronic signature
– Manufacturer Code: 20h
– Device Code: 8819
ECOPACK® package available
FBGA
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TFBGA107 (ZAC)
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Flash memory
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Block locking
– All Blocks locked at power-up
– Any combination of Blocks can be locked
with zero latency
– WP
F
for Block Lock-Down
– Absolute Write Protection with V
PPF
= V
SS
Synchronous / Asynchronous Read
– Synchronous Burst Read mode:
108MHz, 66MHz
– Asynchronous Page Read mode
– Random Access: 96ns
Programming time
– 4.2µs typical Word program time using
Buffer Enhanced Factory Program
command
Memory organization
– Multiple bank memory array: 64 Mbit banks
– Four Extended Flash Array (EFA) Blocks of
64 Kbits
Dual operations
– program/erase in one Bank while read in
others
– No delay between read and write
operations
Security
– 2112-bit user programmable OTP Cells
– 64-bit unique device number
100,000 program/erase cycles per block
Common Flash Interface (CFI)
PSRAM
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Access time: 70ns
User-selectable operating modes
– Asynchronous modes: Random Read, and
Write, Page Read
– Synchronous modes: NOR-Flash, Full
Synchronous (Burst Read and Write)
Asynchronous Page Read
– Page Size: 4, 8 or 16 Words
– Subsequent Read Within Page: 20ns
Burst Read
– Fixed Length (4, 8, 16 or 32 Words) or
Continuous
– Maximum Clock Frequency: 80MHz
Low Power Consumption
– Active Current: < 25mA
– Standby Current: 200µA
– Deep Power-Down Current: 10µA
Low Power Features
– Partial Array Self Refresh (PASR)
– Deep Power-Down (DPD) Mode
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November 2007
Rev 3
1/23
1
NUMONYX [ NUMONYX B.V ]
