M36W0R6050T1
M36W0R6050B1
64 Mbit (4 Mb ×16, Multiple Bank, Burst) Flash memory
and 32 Mbit (2 Mb ×16) PSRAM, multi-chip package
Features
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Multi-Chip Package
– 1 die of 64 Mbit (4 Mb × 16) Flash memory
– 1 die of 32 Mbit (2 Mb × 16) Pseudo SRAM
Supply voltage
– V
DDF
= V
DDP
= V
DDQF
= 1.7 V to 1.95 V
Low power consumption
Electronic signature
– Manufacturer Code: 20h
– Device code (top flash configuration),
M36W0R6050T1: 8810h
– Device code (bottom flash configuration),
M36W0R6050B1: 8811h
Package
– ECOPACK®
FBGA
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Stacked TFBGA88
(ZA)
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Block locking
– All blocks locked at Power-up
– Any combination of blocks can be locked
– WP
F
for Block Lock-Down
Security
– 128-bit user programmable OTP cells
– 64-bit unique device number
Common Flash Interface (CFI)
100 000 program/erase cycles per block
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Flash memory
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Programming time
– 8 µs by Word typical for Fast Factory
Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
Memory blocks
– Multiple Bank memory array: 4 Mbit Banks
– Parameter Blocks (Top or Bottom location)
Synchronous / Asynchronous Read
– Synchronous Burst Read mode: 66 MHz
– Asynchronous/ Synchronous Page Read
mode
– Random Access: 70 ns
Dual operations
– Program Erase in one Bank while Read in
others
– No delay between Read and Write
operations
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PSRAM
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Access time: 70 ns
Asynchronous Page Read
– Page size: 8 words
– First access within page: 70 ns
– Subsequent read within page: 20 ns
Three Power-down modes
– Deep Power-Down
– Partial Array Refresh of 4 Mbits
– Partial Array Refresh of 8 Mbits
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November 2007
Rev 2
1/22
1
NUMONYX [ NUMONYX B.V ]
