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M45PE80-VMW6G 参数 Datasheet PDF下载

M45PE80-VMW6G图片预览
型号: M45PE80-VMW6G
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位,低电压,页面可擦除串行闪存与字节变性和50兆赫的SPI总线接口 [8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 47 页 / 913 K
品牌: NUMONYX [ NUMONYX B.V ]
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M45PE80
Memory organization
5
Memory organization
The memory is organized as:
4096 pages (256 bytes each).
1 048 576 bytes (8 bits each)
16 sectors (512 Kbits, 65536 bytes each)
programmed (bits are programmed from 1 to 0)
erased (bits are erased from 0 to 1)
written (bits are changed to either 0 or 1)
Each page can be individually:
The device is Page or Sector Erasable (bits are erased from 0 to 1).
Table 2.
Memory organization
Sector
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
F0000h
E0000h
D0000h
C0000h
B0000h
A0000h
90000h
80000h
70000h
60000h
50000h
40000h
30000h
20000h
10000h
00000h
Address range
FFFFFh
EFFFFh
DFFFFh
CFFFFh
BFFFFh
AFFFFh
9FFFFh
8FFFFh
7FFFFh
6FFFFh
5FFFFh
4FFFFh
3FFFFh
2FFFFh
1FFFFh
0FFFFh
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