M58BW16F, M58BW32F
Ordering information
9
Ordering information
Table 27. Ordering information scheme
Example:
M58BW32F
T
4
T
3
T
Device type
M58
Architecture
B = Burst mode
Operating voltage
W = [2.7 V to 3.6 V] VDD range for 45 ns speed class
[2.5 V to 3.3 V] VDD range for 55 ns speed class
[2.4 V to VDD] VDDQ range for 45 ns and 55 ns speed classes
Device function
32F = 32 Mbit (x 32), boot block, burst, 0.11 µm technology
16F = 16 Mbit (x 32), boot block, burst, 0.11 µm technology
Array matrix
T = Top boot
B = Bottom boot
Speed
4 = 45 ns
5 = 55 ns
Package
T = PQFP80
ZA = LBGA80, 1.0 mm pitch
Device grade
3 = Automotive grade certified(1), –40 to 125 °C
Option
Blank = Standard packing
T = Tape & reel packing
F = ECOPACK® package, tape & reel 24 mm packing
1. Qualified & characterized according to AEC Q100 & Q003 or equivalent, advanced screening
according to AEC Q001 & Q002 or equivalent.
Devices are shipped from the factory with the memory content bits erased to ’1’.
For a list of available options (speed, package, etc) or for further information on any aspect
of this device, please contact the Numonyx Sales Office nearest to you.
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