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M58BW16FB5T3T 参数 Datasheet PDF下载

M58BW16FB5T3T图片预览
型号: M58BW16FB5T3T
PDF下载: 下载PDF文件 查看货源
内容描述: 16或32兆位( ×32 ,引导块,突发) 3.3 V电源闪存 [16 or 32 Mbit (x 32, boot block, burst) 3.3 V supply Flash memories]
分类和应用: 闪存存储
文件页数/大小: 87 页 / 1607 K
品牌: NUMONYX [ NUMONYX B.V ]
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M58BW16F, M58BW32F  
Ordering information  
9
Ordering information  
Table 27. Ordering information scheme  
Example:  
M58BW32F  
T
4
T
3
T
Device type  
M58  
Architecture  
B = Burst mode  
Operating voltage  
W = [2.7 V to 3.6 V] VDD range for 45 ns speed class  
[2.5 V to 3.3 V] VDD range for 55 ns speed class  
[2.4 V to VDD] VDDQ range for 45 ns and 55 ns speed classes  
Device function  
32F = 32 Mbit (x 32), boot block, burst, 0.11 µm technology  
16F = 16 Mbit (x 32), boot block, burst, 0.11 µm technology  
Array matrix  
T = Top boot  
B = Bottom boot  
Speed  
4 = 45 ns  
5 = 55 ns  
Package  
T = PQFP80  
ZA = LBGA80, 1.0 mm pitch  
Device grade  
3 = Automotive grade certified(1), –40 to 125 °C  
Option  
Blank = Standard packing  
T = Tape & reel packing  
F = ECOPACK® package, tape & reel 24 mm packing  
1. Qualified & characterized according to AEC Q100 & Q003 or equivalent, advanced screening  
according to AEC Q001 & Q002 or equivalent.  
Devices are shipped from the factory with the memory content bits erased to ’1’.  
For a list of available options (speed, package, etc) or for further information on any aspect  
of this device, please contact the Numonyx Sales Office nearest to you.  
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