欢迎访问ic37.com |
会员登录 免费注册
发布采购

M58BW32FB5ZA3F 参数 Datasheet PDF下载

M58BW32FB5ZA3F图片预览
型号: M58BW32FB5ZA3F
PDF下载: 下载PDF文件 查看货源
内容描述: 16或32兆位( ×32 ,引导块,突发) 3.3 V电源闪存 [16 or 32 Mbit (x 32, boot block, burst) 3.3 V supply Flash memories]
分类和应用: 闪存内存集成电路
文件页数/大小: 87 页 / 1607 K
品牌: NUMONYX [ NUMONYX B.V ]
 浏览型号M58BW32FB5ZA3F的Datasheet PDF文件第2页浏览型号M58BW32FB5ZA3F的Datasheet PDF文件第3页浏览型号M58BW32FB5ZA3F的Datasheet PDF文件第4页浏览型号M58BW32FB5ZA3F的Datasheet PDF文件第5页浏览型号M58BW32FB5ZA3F的Datasheet PDF文件第6页浏览型号M58BW32FB5ZA3F的Datasheet PDF文件第7页浏览型号M58BW32FB5ZA3F的Datasheet PDF文件第8页浏览型号M58BW32FB5ZA3F的Datasheet PDF文件第9页  
M58BW16F
M58BW32F
16 or 32 Mbit (x 32, boot block, burst)
3.3 V supply Flash memories
Preliminary Data
Features
Supply voltage
– V
DD
= 2.7 V to 3.6 V (45 ns) or
V
DD
= 2.5 V to 3.3 V (55 ns)
– V
DDQ
= V
DDQIN
= 2.4 V to 3.6 V for I/O
buffers
High performance
– Access times: 45 and 55 ns
– Synchronous burst reads
– 75 MHz effective zero wait-state burst read
– Asynchronous page reads
M58BW32F memory organization:
– Eight 64 Kbit small parameter blocks
– Four 128 Kbit large parameter blocks
– Sixty-two 512 Kbit main blocks
M58BW16F memory organization:
– Eight 64 Kbit parameter blocks
– Thirty-one 512 Kbit main blocks
Hardware block protection
– WP pin to protect any block combination
from Program and Erase operations
– PEN signal for Program/Erase Enable
Irreversible modify protection (OTP like) on
128 Kbits:
– Block 1 (bottom device) or block 72 (top
device) in the M58BW32F
– Blocks 2 and 3 (bottom device) or blocks 36
and 35 (top device) in the M58BW16F
Security
– 64-bit unique device identifier (UID)
Fast programming
– Write to buffer and program capability
Optimized for FDI drivers
– Common Flash interface (CFI)
– Fast Program/Erase Suspend feature in
each block
Low power consumption
– 100 µA typical Standby current
PQFP80 (T)
LBGA
LBGA80 (ZA)
10 x 8 ball array
Electronic signature
– Manufacturer code: 0020h
– Top device codes:
M58BW32FT: 8838h
M58BW16FT: 883Ah
– Bottom device codes:
M58BW32FB: 8837h
M58BW16FB: 8839h
Automotive device grade 3:
– Temperature:
40 to 125 °C
– Automotive grade certified
March 2008
Rev 5
1/87
1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.