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M58LT128HSB8ZA6E 参数 Datasheet PDF下载

M58LT128HSB8ZA6E图片预览
型号: M58LT128HSB8ZA6E
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆位(8 MB 】 16 ,多银行,多接口,突发) 1.8 V电源供电,安全闪存 [128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 110 页 / 2025 K
品牌: NUMONYX [ NUMONYX B.V ]
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M58LT128HST
M58LT128HSB
128 Mbit (8 Mb ×16, multiple bank, multilevel interface, burst)
1.8 V supply, secure Flash memories
Features
Supply voltage
– V
DD
= 1.7 V to 2.0 V for Program, Erase
and Read
– V
DDQ
= 2.7 V to 3.6 V for I/O buffers
– V
PP
= 9 V for fast program
Synchronous/Asynchronous Read
– Synchronous Burst Read mode: 52 MHz
– Asynchronous Page Read mode
– Random access: 85 ns
Synchronous Burst Read Suspend
Programming time
– 2.5 µs typical word program time using
Buffer Enhanced Factory Program
command
Memory organization
– Multiple bank memory array: 8-Mbit banks
– Parameter blocks (top or bottom location)
Dual operations
– program/erase in one bank while read in
others
– No delay between Read and Write
operations
Block protection
– All blocks protected at power-up
– Any combination of blocks can be protected
with zero latency
– Absolute write protection with V
PP
= V
SS
Security
– Software security features
– 64-bit unique device number
– 2112-bit user programmable OTP Cells
Common flash interface (CFI)
100 000 program/erase cycles per block
BGA
TBGA64 (ZA)
10 × 13 mm
Electronic signature
– Manufacturer code: 20h
– Top device codes:
M58LT128HST: 88D6h
– Bottom device codes
M58LT128HSB: 88D7h
TBGA64 package
– ECOPACK® available
December 2007
Rev 3
1/110
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