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M58LT256JST8ZA6 参数 Datasheet PDF下载

M58LT256JST8ZA6图片预览
型号: M58LT256JST8ZA6
PDF下载: 下载PDF文件 查看货源
内容描述: 256兆位( Mb的16 】 16 ,多银行,多层次,突发) 1.8 V电源供电,安全闪存 [256 Mbit (16 Mb 】 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 108 页 / 1965 K
品牌: NUMONYX [ NUMONYX B.V ]
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Part numbering
M58LT256JST, M58LT256JSB
14
Part numbering
Table 28.
Example:
Device type
M58
Architecture
L = multilevel, multiple bank, burst mode
Operating voltage
T = V
DD
= 1.7 V to 2.0 V, V
DDQ
= 2.7 V to 3.6 V
Density
256 = 256 Mbit (× 16)
Technology
J = 90 nm technology, multilevel design
Security
S = Secure
Parameter location
T = top boot
B = bottom boot
Speed
8 = 85 ns
Package
ZA = TBGA64, 10 × 13 mm, 1 mm pitch
Temperature range
6 = –40 to 85 °C
Packing option
E = ECOPACK® package, standard packing
F = ECOPACK® package, tape and reel packing
T = tape and reel packing
Blank = standard packing
Ordering information scheme
M58LT256JST
8 ZA 6
E
Devices are shipped from the factory with the memory content bits erased to ’1’.
For a list of available options (speed, package, etc.) or for further information on any aspect
of this device, please contact the Numonyx sales office nearest to you.
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