M58LT256JST
M58LT256JSB
256 Mbit (16 Mb × 16, multiple bank, multilevel, burst)
1.8 V supply, secure Flash memories
Features
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Supply voltage
– V
DD
= 1.7 V to 2.0 V for program, erase
and read
– V
DDQ
= 2.7 V to 3.6 V for I/O buffers
– V
PP
= 9 V for fast program
Synchronous/asynchronous read
– Synchronous burst read mode: 52 MHz
– Random access: 85 ns
– Asynchronous page read mode
Synchronous burst read suspend
Programming time
– 5 µs typical word program time using Buffer
Enhanced Factory Program command
Memory organization
– Multiple bank memory array: 16 Mbit banks
– Parameter blocks (top or bottom location)
Dual operations
– Program/erase in one bank while read in
others
– No delay between read and write
operations
Block protection
– All blocks protected at power-up
– Any combination of blocks can be protected
with zero latency
– Absolute write protection with V
PP
= V
SS
Security
– Software security features
– 64 bit unique device number
– 2112 bit user programmable OTP Cells
CFI (common Flash interface)
100 000 program/erase cycles per block
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BGA
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TBGA64 (ZA)
10 x 13 mm
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Electronic signature
– Manufacturer code: 20h
– Top device codes:
M58LT256JST: 885Eh
– Bottom device codes
M58LT256JSB: 885Fh
TBGA64 package
– ECOPACK® compliant
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December 2007
Rev 4
1/108
1
NUMONYX [ NUMONYX B.V ]
